BFT93,215 datasheet

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• Маркировка
  BFT93,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BFT93,215 Collector Current (dc) (max): 35mA Collector- Emitter Voltage Vceo Max: - 12 V Collector-base Voltage: 15V Collector-emitter Voltage: 12V Configuration: Single Continuous Collector Current: - 35 mA Current - Collector (ic) (max): 35mA Dc: 08+ Dc Collector/base Gain Hfe Min: 50 Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 30mA, 5V Dc Current Gain (min): 20 Emitter- Base Voltage Vebo: - 2 V Emitter-base Voltage: 2V Frequency (max): 5GHz Frequency - Transition: 5GHz Gain: - ID_COMPONENTS: 1948986 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 5 GHz Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 2.4dB @ 500MHz Number Of Elements: 1 Operating Temp Range: -65C to 175C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Power - Max: 300mW Power Dissipation: 300 mW Quantity: 100 Transistor Polarity: NPN Transistor Type: PNP Voltage - Collector Emitter Breakdown (max): 12V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: - 12 V Emitter- Base Voltage VEBO: - 2 V DC Collector/Base Gain hfe Min: 50 Maximum Operating Temperature: + 175 C DC Current Gain hFE Max: 20 at 30 mA at 5 V Gain Bandwidth Product fT: 5000 MHz Factory Pack Quantity: 3000 Part # Aliases: BFT93 T/R Other Names: 568-1993-2, 933347740215, BFT93 T/R
• Количество страниц
  10 шт.
• Формат
  PDF

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• Размер файла
  87,73 KB

BFT93,215 datasheet скачать

BFT93,215 datasheet